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AC16FSM bảng dữ liệu(HTML) 124 Page - Teccor Electronics |
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124 / 223 page  AN1001 Application Notes http://www.teccor.com AN1001 - 4 ©2002 Teccor Electronics +1 972-580-7777 Thyristor Product Catalog Electrical Characteristic Curves of Thyristors Figure AN1001.12 V-I Characteristics of SCR Device Figure AN1001.13 V-I Characteristics of Triac Device Figure AN1001.14 V-I Characteristics of Bilateral Trigger Diac Figure AN1001.15 V-I Characteristics of a Sidac Chip Methods of Switching on Thyristors Three general methods are available for switching thyristors to on-state condition: • Application of gate signal • Static dv/dt turn-on • Voltage breakover turn-on Application Of Gate Signal Gate signal must exceed IGT and VGT requirements of the thyristor used. For an SCR (unilateral device), this signal must be positive with respect to the cathode polarity. A triac (bilateral device) can be turned on with gate signal of either polarity; however, different polarities have different requirements of IGT and VGT which must be satisfied. Since diacs and sidacs do not have a gate, this method of turn-on is not applicable. In fact, the single major application of diacs is to switch on triacs. Static dv/dt Turn-on Static dv/dt turn-on comes from a fast-rising voltage applied across the anode and cathode terminals of an SCR or the main terminals of a triac. Due to the nature of thyristor construction, a small junction capacitor is formed across each PN junction. Figure AN1001.16 shows how typical internal capacitors are linked in gated thyristors. Figure AN1001.16 Internal Capacitors Linked in Gated Thyristors Reverse Breakdown Voltage Forward Breakover Voltage Specified Minimum Off - State Blocking Voltage (VDRM) +I -I +V -V Minimum Holding Current (IH) Voltage Drop (VT) at Specified Current (iT) Latching Current (IL) Off - State Leakage Current - (IDRM) at Specified VDRM Specified Minimum Reverse Blocking Voltage (VRRM) Reverse Leakage Current - (IRRM) at Specified VRRM Breakover Voltage Specified Minimum Off-state Blocking Voltage (VDRM) +I -I +V -V Minimum Holding Current (IH) Voltage Drop (VT) at Specified Current (iT) Latching Current (IL) Off-state Leakage Current – (IDRM) at Specified VDRM +I -I 10 mA +V -V Breakover Current IBO Breakover Voltage VBO ∆V -V +I VDRM +V VS IS IH RS IDRM IBO VBO VT IT (IS - IBO) (VBO - VS) RS = -I |
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