MBRF3045CTR datasheet(1/2 Pages) THINKISEMI

tên linh kiện	MBRF3045CTR

Giải thích chi tiết về linh kiện	30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

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nhà sản xuất	THINKISEMI [Thinki Semiconductor Co., Ltd.]

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Pb Free Plating Product

MBRF3035CTR thru MBRF30200CTR

Pb

Features

Low forward voltage drop

High current capability

Case: Fully Isolated Molding TO-220F Full Plastic Pak

High surge current capability

Weight: 2.0 gram approximately

Polarity: As marked on diode body

method 208

Mounting position: Any

Terminals: Solderable per MIL-STD-202

Mechanical Data

Low reverse leakage current

Epoxy: UL 94V-0 rate flame retardant

ITO-220AB

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS,EPS and UPS

Car Audio Amplifiers and Sound Device Systems

30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Standard MBR matured technology with high reliablity

Positive

Negative

Common Cathode

Case

Common Anode

Doubler

Case

Tandem Polarity

Case

Series

Tandem Polarity

Suffix "CTR"

Suffix "CTD"

Suffix "CTS"

Suffix "CT"

®

MBRF3035CTR thru MBRF30200CTR

http://www.thinkisemi.com/

Page 1/2

Rev.07C

.189(4.8)

.406(10.3)

.130(3.3)

.114(2.9)

.071(1.8)

.055(1.4)

.035(0.9)

.011(0.3)

(2.55)

.1

.032(.8)

.134(3.4)

.165(4.2)

.381(9.7)

.114(2.9)

.098(2.5)

.055(1.4)

.039(1.0)

MAX

.118(3.0)

Unit : inch (mm)

VRRM

35

45

50

60

90

100

150

200

V

VRMS

24

31

35

42

63

70

105

140

V

VDC

35

45

50

60

90

100

150

200

V

IF(AV)

A

IRRM

A

dV/dt

V/μs

RθJC

TJ

TSTG

Operating junction temperature range

- 55 to +150

Storage temperature range

- 55 to +150

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Typical thermal resistance

4

mA

20

15

Voltage rate of change (Rated VR)

10000

10

Maximum reverse current @ rated VR

TJ=25 ℃

TJ=125 ℃

IR

0.2

Maximum instantaneous forward voltage (Note 2)

IF=15A, TJ=25℃

IF=15A, TJ=125℃

IF=30A, TJ=25℃

IF=30A, TJ=125℃

VF

V

0.70

0.75

0.84

0.95

0.82

0.90

0.94

1.05

A

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

IFSM

200

A

Peak repetitive reverse surge current (Note 1)

IFRM

30

0.73

0.78

0.82

0.92

0.60

0.65

0.70

0.80

MBRF

30200

CTR

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

10.5

Maximum DC blocking voltage

Maximum average forward rectified current

30

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

PARAMETER

SYMBOL

MBRF

3035

CTR

MBRF

3045

CTR

MBRF

3050

CTR

MBRF

3060

CTR

MBRF

3090

CTR

MBRF

30100

CTR

MBRF

30150

CTR

/W

℃

Số phần tương tự - MBRF3045CTR

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	MBRF3045CT	46Kb / 3P	Dual Schottky Rectifiers 02-Oct-02
Taiwan Semiconductor Co...	MBRF3045CT	250Kb / 2P	Isolated 30.0 AMPS. Schottky Barrier Rectifiers
Vishay Siliconix	MBRF3045CT	499Kb / 5P	Dual Common-Cathode Schottky Rectifier 08-Nov-07
Silicon Standard Corp.	MBRF3045CT	285Kb / 5P	Dual Schottky Barrier Rectifiers
KEC(Korea Electronics)	MBRF3045CT	43Kb / 2P	SCHOTTKY BARRIER TYPE DIODE

More results

Mô tả tương tự - MBRF3045CTR

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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