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LPV821 bảng dữ liệu(PDF) 4 Page - Texas Instruments

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tên linh kiện LPV821
Giải thích chi tiết về linh kiện  650nA, Precision, Nanopower, Zero-Drift Amplifier
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LPV821 bảng dữ liệu(HTML) 4 Page - Texas Instruments

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LPV821
SNOSD36 – AUGUST 2017
www.ti.com
Product Folder Links: LPV821
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under . Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should
be current limited to 10 mA or less.
(3)
Short-circuit to ground, one amplifier per package.
7 Specifications
7.1 Absolute Maximum Ratings
See
(1)
MIN
MAX
UNIT
Voltage
Supply, VS = (V+) - (V–)
-0.3
4
V
Input/Output Pin Voltage(2)
(V–) - 0.3
(V+) + 0.3
Differential Input Voltage +IN - (-IN)(2)
- 0.3
+ 0.3
Current
Signal input terminals(2)
–10
10
mA
Output short-circuit(3)
Continuous
Continuous
Junction temperature
150
°C
Operating ambient temperature
–40
125
Storage temperature, Tstg
–65
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±250
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply
voltage
VS = (V+) - (V–)
1.7
3.6
V
Specified
temperature
–40
125
°C
7.4 Thermal Information
THERMAL METRIC
LPV821
UNIT
DBV (SOT)
5 PINS
RθJA
Junction-to-ambient thermal resistance
218.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
101.3
°C/W
RθJB
Junction-to-board thermal resistance
52.9
°C/W
ψJT
Junction-to-top characterization parameter
18.9
°C/W
ψJB
Junction-to-board characterization parameter
52.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W



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