LIS3L02AQ

4/9

Notes: 1. Typical specifications are not guaranteed

2. Offset and sensitivity are essentially ratiometric to supply voltage

3. Guaranteed by wafer level test and measurement of initial offset and sensitivity

4. Guaranteed by design through measurements done up to 1g

5. Contribution to the measuring output of the inclination/acceleration along the perpendicular axis

6. Guaranteed by design

8. Self test “output voltage delta change” varies cubically with supply voltage

9. When full-scale is set to 6g, self-test “output delta change” is one third of the specified value

10.Bandwidth=1/(2*

π*110KΩ*Cload)

ABSOLUTE MAXIMUM RATING

Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to

maximum rating conditions for extended periods may affect device reliability.

Table 4. Absolute Maximum Rating

Vst

Self test input

Logic 0 level

0

0.8

V

Logic 1 level

2.2

Vdd

V

Rout

Output impedance

80

110

140

k

Ω

Cload

320

pF

Ton

Turn-On Time at exit from

Power Down mode

Cload in

µF

550*Cload

+0.3

ms

Symbol

Ratings

Maximum Value

Unit

Vdd

Supply voltage

-0.3 to 7

V

Vin

Input voltage on any control pin (FS, PD, ST)

-0.3 to Vdd +0.3

V

Acceleration (Any axis, Powered, Vdd=3.3V)

3000g for 0.5 ms

10000g for 0.1 ms

Acceleration (Any axis, Unpowered)

3000g for 0.5 ms

10000g for 0.1 ms

Operating Temperature Range

-40 to +85

°C

Storage Temperature Range

-40 to +105

°C

ESD

Electrostatic discharge protection

2KV HBM

Table 3. Electrical Characteristics (continued)

(Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless

otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Unit