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P86F6SN bảng dữ liệu(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd

tên linh kiện P86F6SN
Giải thích chi tiết về linh kiện  Power MOSFET
PDF  4 Pages
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nhà sản xuất  SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Trang chủ  http://www.shindengen.co.jp/
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P86F6SN bảng dữ liệu(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd

  P86F6SN Datasheet HTML 1Page - Shindengen Electric Mfg.Co.Ltd P86F6SN Datasheet HTML 2Page - Shindengen Electric Mfg.Co.Ltd P86F6SN Datasheet HTML 3Page - Shindengen Electric Mfg.Co.Ltd P86F6SN Datasheet HTML 4Page - Shindengen Electric Mfg.Co.Ltd  
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（J532-p〈2016．06〉I2）
＊Sine waveは50Hzで測定しています。
＊50Hz sine wave is used for measurements.
■特性図 CHARACTERISTIC DIAGRAMS
P86F6SN
出力特性
Typical Output Characteristics
Drain・Source Voltage VDS
〔V〕
伝達特性
Transfer Characteristics
Gate・Source Voltage VGS
〔V〕
ドレイン・ソース間オン抵抗 − ドレイン電流
Static Drain-Source On-state Resistance vs Drain Current
Drain current ID
〔A〕
ドレイン・ソース間オン抵抗 − ケース温度
Static Drain-Source On-state Resistance vs Case Temperature
Case Temperature Tc
〔℃〕
ゲートしきい値 電圧 − ケース温度
Gate Threshold Voltage vs Case Temperature
Case Temperature Tc
〔℃〕
安全動作領域
Safe Operating Area
Drain・Source Voltage VDS
〔V〕
過渡熱抵抗
Transient Thermal Impedance
Time t
〔s〕
キャパシタンス特性
Capacitance Characteristics
Drain・Source Voltage VDS
〔V〕
全損失減少率 − ケース温度
Power Derating - Case Temperature
Case Temperature Tc
〔℃〕
ゲートチャージ特性
Gate Charge Characteristics
Total Gate Charge Qg
〔nC〕
単発アバランシェエネルギー減少率 − チャネル温度
Single Avalanche Energy Derating vs Channel Temperature
Starting Channel Temperature Tch
〔℃〕
0
0.1
0.2
0.3
0.4
0.5
0.6
0
20
40
60
80
100
120
140
160
172
0
1
2
3
4
5
6
7
8
1
2
5
10
20
50
100 172
1
2
5
10
55
0
50
100
150
0.5
1
2
5
10
1
1.5
2
2.5
3
3.5
4
4.5
0.1
1
10
60 100
0.1
1
10
86
172
258
344
500
10-5
10-4
10-3
10-2
10-1
100
101
102
103
0.001
0.01
0.1
1
10
100
0
10
20
30
40
50
60
100
1000
10000
100000
0
25
50
75
100
125
150
0
20
40
60
80
100
0
50
100
150
200
250
300
0
10
20
30
40
50
60
0
5
10
15
20
0
50
100
150
0
20
40
60
80
100
パルス測定
pulse measurement
パルス測定
pulse measurement
VGS=10V
Tc=25℃
TYP
ID=43A
VGS=10V
TYP
55
0
50
100
150
パルス測定
pulse measurement
VDS=10V
ID=1mA
TYP
VGS= 10V
8V
6V
VGS= 5V
Tc=25℃
TYP
パルス測定
pulse measurement
0
20
40
60
80
100
120
140
160
172
Tc=150℃
Tc=100℃
Tc= 25℃
Tc= 55℃
VDS=10 [V]
TYP
パルス測定
pulse measurement
RDS(ON) Limited
(at VGS=10V)
Power Dissipation
Limited
Tc=25℃
single pulse
10μs
100μs
1ms
10ms
DC
アルミ板：37.5mm×37.5mm
アルミ厚：3mm
θja
θjc
Tc=25℃
f=1MHz
TYP
Ciss
Coss
Crss
VDS
VDD=48V
24V
VGS
ID=86A
TYP



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