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3

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

IRHM7150

IRHM7150

IRHM7150

IRHM7150

IRHM7150

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

Parameter

Parameter

Parameter

Parameter

300 to 1000K Rads (Si)

U

UU

UUnits

nits

nits

nits

nits

Test Conditions

Test Conditions

Test Conditions

Test Conditions

Test Conditions

Min

Min

Min

Min

Min

Max

Max

Max

Max

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

100

—

100

—

V

Gate Threshold Voltage# ➃

2.0

4.0

1.25

4.5

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

25

—

50

µA

Static Drain-to-Source# ➃

—

0.065

—

0.09

Ω

On-State Resistance (TO-3)

Static Drain-to-Source# ➃

—

0.065

—

0.09

Ω

On-State Resistance (TO-254AA)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Radiation Characteristics

Radiation Characteristics

Radiation Characteristics

Radiation Characteristics

1. Part number IRHM7150 (JANSR2N7268)

2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)

Fig a.

Fig a.

Fig a.

Fig a.

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage# ➃

—

1.4

—

1.4

V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Ion

LET

Ion

LET

Ion

LET

Ion

LET

Energy Range

Energy Range

Energy Range

Energy Range

Energy Range

VDS(V)

VDS(V)

VDS(V)

VDS(V)

VDS(V)

MeV/(mg/cm )) (MeV)

(µm) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V

@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V

@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V

@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V

@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V

Cu

28

285

43

100

100

100

80

60

—

Br

36.8

305

39

100

90

70

50

—

—

0

20

40

60

80

100

120

0

-5

-10

-15

-20

-25

VGS

Cu

Br