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EC732302 bảng dữ liệu(PDF) 2 Page - E-CMOS Corporation

tên linh kiện EC732302
Giải thích chi tiết về linh kiện  20V, 2.4A N-Channel MOSFET
PDF  6 Pages
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nhà sản xuất  E-CMOS [E-CMOS Corporation]
Trang chủ  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC732302 bảng dữ liệu(HTML) 2 Page - E-CMOS Corporation

  EC732302 Datasheet HTML 1Page - E-CMOS Corporation EC732302 Datasheet HTML 2Page - E-CMOS Corporation EC732302 Datasheet HTML 3Page - E-CMOS Corporation EC732302 Datasheet HTML 4Page - E-CMOS Corporation EC732302 Datasheet HTML 5Page - E-CMOS Corporation EC732302 Datasheet HTML 6Page - E-CMOS Corporation  
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EC732302
20V、2.4A N-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
5E19N-Rev.F001
Electrical Characteristics (TA=25℃ unless otherwise noted)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2
FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
\
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=3.1A
70
115
m
Ω
VGS=4.5V, ID=3.6A
45
60
m
Ω
Forward Transconductance
gFS
VDS=5V,ID=3.6A
8
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=10V,VGS=0V,
F=1.0MHz
300
PF
Output Capacitance
Coss
120
PF
Reverse Transfer Capacitance
Crss
80
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
VDD=10V, RL = 2.8
Ω
VGS=4.5V,RGEN=6
Ω,
ID=3.6A,
7
15
nS
Turn-on Rise Time
tr
55
80
nS
Turn-Off Delay Time
td(off)
16
60
nS
Turn-Off Fall Time
tf
10
25
nS
Total Gate Charge
Qg
VDS=10V,ID=3.6A,VGS=4.5V
4.0
10
nC
Gate-Source Charge
Qgs
0.65
nC
Gate-Drain Charge
Qgd
1.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=0.94A
0.76
1.2
V
Diode Forward Current (Note 2)
IS
0.94
A
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250
μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250
μA
0.65
0.95
1.2
V



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