EC732301B1R datasheet(2/6 Pages) E-CMOS

2 / 6 page

EC732301

P chanel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 6

5E06N-Rev.F001

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-3 ①

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-10

VSD

Diode Forward Voltage

—

-0.83

-1.2

IS=-0.75A, VGS=0V

Thermal Characteristics

Symbol

Characterizes

Typ.

Max.

Units

RθJA

Junction-to-

ambient (t ≤ 10s) ④

—

100

°C /W

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-20

—

VGS = 0V, ID = -

250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=-4.5V,ID = -3A

Static Drain-to-Source on-resistance

—

115

VGS=-2.5V,ID = -2A

VGS(th)

Gate threshold voltage

-0.5

—

-1

VDS = VGS, ID = -

250μA

TJ = 125°C

Gate threshold voltage

—

-0.58

—

IDSS

Drain-to-Source leakage current

—

-1

μA

VDS = -20V,VGS = 0V

TJ = 125°C

Drain-to-Source leakage current

—

-50

IGSS

Gate-to-Source forward leakage

—

100

VGS =12V

Gate-to-Source forward leakage

—

-100

VGS = -12V

Total gate charge

—

9.6

—

ID = -3A,

VDS=-10V,

VGS = -4.5V

Qgs

Gate-to-Source charge

—

1.1

—

Qgd

Gate-to-Drain("Miller") charge

—

2.6

—

td(on)

Turn-on delay time

—

9.7

—

VGS=-4.5V, VDS =-20V,

RGEN

=3Ω

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

490

—

VGS = 0V,

VDS =-10V,

ƒ = 1MHz

Coss

Output capacitance

—

Crss

Reverse transfer capacitance

—

Source-Drain Ratings and Characteristics

EC732301B1R bảng dữ liệu(PDF) 2 Page - E-CMOS Corporation

EC732301B1R bảng dữ liệu(HTML) 2 Page - E-CMOS Corporation

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL