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GS1R bảng dữ liệu(PDF) 1 Page - Chip Integration Technology Corporation

tên linh kiện GS1R
Giải thích chi tiết về linh kiện  1A Surface Mount General Purpose Rectifiers
PDF  3 Pages
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nhà sản xuất  CITC [Chip Integration Technology Corporation]
Trang chủ  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

GS1R bảng dữ liệu(HTML) 1 Page - Chip Integration Technology Corporation

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1
Dimensions in inches and (millimeters)
■ Features
■ Mechanical data
■ Limiting Value (Absolute Maximum Rating)
■ Outline
I = 1A
o
•
VRRM = 1600V
•
Low profile surface mounted application in order to
•
optimize board space.
High current capability.
•
High surge capability.
•
Glass passivated chip junction inside.
•
Suffix "G" indicates Halogen-free part, ex.GS1RG.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
SMA
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SMA
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Weight : 0.002 ounce, 0.055 gram
GS1R
1A Surface Mount General Purpose Rectifiers
V
R R M
T
S T G
Repetitive peak reverse voltage
Storage temperature
Parameter
Conditions
Symbol
Value
UNIT
V
Document ID : DS-22G22
Revised Date : 2016/12
Revision : C1
Marking code
0.098 (2.50)
0.067 (1.70)
0.067 (1.70)
0.047 (1.20)
0.114 (2.90)
0.083 (2.10)
0.187 (4.75)
0.157 (4.00)
0.012 (0.30)
TYP.
0.224 (5.70)
0.185 (4.70)
0.061 (1.55)
0.030 (0.75)
0.008 (0.20)
0.003 (0.08)
■ ِ Application
• Rectifier
O
■ Electrical characteristics (Ta= 25 C unless otherwise specified.)
1600
Average forward current
0
60Hz half-sine wave, resistance load, T =25 C
a
I
F ( AV )
1
A
Surge (non- repetitive) forward current
0
60Hz half-sine wave, 1 cycle, T =25 C
a
I
F S M
60
Operating Junction temperature
T
J
-55 ~ + 150
O C
-55 ~ + 150
V
F M
C
J
Peak forward voltage
Typical junction capacitance
Parameter
Conditions
Symbol
Max. Value
UNIT
V
1.1
Peak reverse current
I
R R M 1
2.5
μA
50
Thermal resistance (Typical)
R
θ J - A
50
O C/W
35
I =1A
F M
o
V
= V
, T =25 C
R M
R R M
a
I
R R M 2
o
V
= V
, T =125 C
R M
R R M
a
Between junction and ambient
Measured at 1MHz and applied reverse voltage
of 4.0 V.D.C.
pF
Chip Integration Technology Corporation
Document ID : DS-22G22
Revised Date : 2016/12
Revision : C1


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