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GS1R bảng dữ liệu(PDF) 1 Page - Chip Integration Technology Corporation |
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GS1R bảng dữ liệu(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 3 page ![]() 1 Dimensions in inches and (millimeters) ■ Features ■ Mechanical data ■ Limiting Value (Absolute Maximum Rating) ■ Outline I = 1A o • VRRM = 1600V • Low profile surface mounted application in order to • optimize board space. High current capability. • High surge capability. • Glass passivated chip junction inside. • Suffix "G" indicates Halogen-free part, ex.GS1RG. • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 SMA • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SMA • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Weight : 0.002 ounce, 0.055 gram GS1R 1A Surface Mount General Purpose Rectifiers V R R M T S T G Repetitive peak reverse voltage Storage temperature Parameter Conditions Symbol Value UNIT V Document ID : DS-22G22 Revised Date : 2016/12 Revision : C1 Marking code 0.098 (2.50) 0.067 (1.70) 0.067 (1.70) 0.047 (1.20) 0.114 (2.90) 0.083 (2.10) 0.187 (4.75) 0.157 (4.00) 0.012 (0.30) TYP. 0.224 (5.70) 0.185 (4.70) 0.061 (1.55) 0.030 (0.75) 0.008 (0.20) 0.003 (0.08) ■ ِ Application • Rectifier O ■ Electrical characteristics (Ta= 25 C unless otherwise specified.) 1600 Average forward current 0 60Hz half-sine wave, resistance load, T =25 C a I F ( AV ) 1 A Surge (non- repetitive) forward current 0 60Hz half-sine wave, 1 cycle, T =25 C a I F S M 60 Operating Junction temperature T J -55 ~ + 150 O C -55 ~ + 150 V F M C J Peak forward voltage Typical junction capacitance Parameter Conditions Symbol Max. Value UNIT V 1.1 Peak reverse current I R R M 1 2.5 μA 50 Thermal resistance (Typical) R θ J - A 50 O C/W 35 I =1A F M o V = V , T =25 C R M R R M a I R R M 2 o V = V , T =125 C R M R R M a Between junction and ambient Measured at 1MHz and applied reverse voltage of 4.0 V.D.C. pF Chip Integration Technology Corporation Document ID : DS-22G22 Revised Date : 2016/12 Revision : C1 |
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