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MBR860CP bảng dữ liệu(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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MBR860CP bảng dữ liệu(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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1 / 2 page ![]() 28 31 35 42 56 70 105 140 V 40 45 50 60 80 100 150 200 V TO-251/IPAK e: TO-251/IPAK, Molded Plastic Mounting Position: Any Polarity: See Diagram erminals: Plated Leads Solderable per 0.85 0.92 = 4A V Cas MBR840CP-MBR8200CP 1 of 2 °C/W pF 0.70 V 880CP Characteristic Symbol Classification Rating 94V-O Plastic Case Material has UL Flammability Guard Ring Die Construction For Use in Low Voltage Application Low Power Loss, High Efficiency Ideally Suited for Automatic Assembly 8.0 A SCHOTTKY BARRIER DIODE Features Mechanical Data ! ! T MIL-STD-202, Method 208 ! ! ! Lead Free: For RoHS / Lead Free Version Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ! Schottky Barrier Chip ! ! ! ! ! Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current @TL = 75°C (Note 1) IO 8. 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM A Forward Voltage @IF FM Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.1 20 mA Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 1) RJA Operating and Storage Temperature Range Tj, TSTG -55 to +175 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MBR 840CP MBR 850CP MBR 860CP 8100CP Units 0.80 350 280 200 15 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8200CP 100 MBR 845CP MBR840CP-MBR8200CP MBR MBR -55 to +150 MBR 8150CP MBR Alldatasheet |
Số phần tương tự - MBR860CP |
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Mô tả tương tự - MBR860CP |
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