SSPS7338N datasheet(1/4 Pages) SECOS

tên linh kiện	SSPS7338N

Giải thích chi tiết về linh kiện	N-Ch Enhancement Mode Power MOSFET

PDF	4 Pages

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nhà sản xuất	SECOS [SeCoS Halbleitertechnologie GmbH]

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1 / 4 page

Elektronische Bauelemente

SSPS7338

19A, 30V, RDS(O ) 6.9 mΩ

Ω

-Ch Enhancement Mode Power MOSFET

25-Apr-2016 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

B

E

F

G

g

A

e

b

θ

D

C

d

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to provide

low RDS(on) and to ensure minimal power loss and

heat dissipation.

FEATURES

Low RDS(on) trench technology

Low thermal impedance

Fast switching speed

APPLICATION

Industrial D/C/DC conversion circuits

White LED boost converters

Automotive systems

PACKAGE INFORMATION

Package

MPQ

Leader Size

DFN3x3-8PP

3K

13 inch

MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

TA=25°C

19

A

Continuous Drain Current

1

TA=70°C

ID

16

A

Pulsed Drain Current

2

IDM

80

A

Continuous Source Current (Diode Conduction)

1

IS

5.1

A

TA=25°C

3.5

W

Power Dissipation

1

TA=70°C

PD

2

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Ratings

t≦10 sec

35

°C / W

Maximum Thermal Resistance from

Junction to Ambient

1

Steady State

RθJA

81

°C / W

Notes:

1.

The surface of the device is mounted on a 1” x 1” FR4 board.

2.

The pulse width is limited by the maximum junction temperature.

DFN3x3-8PP

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.70

0.90

θ

0

°

12

°

B

3.00BSC

b

0.20

0.40

C

0.10

0.25

d

0.65BSC

D

1.80

2.3

e

3.00BSC

E

3.2BSC

g

0.70(TYP.)

F

0.01

0.02

G

2.35BSC

Số phần tương tự - SSPS7338N

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Số phần tương tự - SSPS7338N

Mô tả tương tự - SSPS7338N

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