SSM0420S datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSM0420S

2.05A, 200V, RDS(O ) 360m

-Channel Enhancement Mode Power MOSFET

02-Sep-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Drain-Source Breakdown Voltage

BVDSS

200

VGS=0, ID=250µA

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID =250µA

Forward Transfer conductance

gFS

3.2

VDS=15V, ID=2A

Gate-Source Leakage Current

IGSS

±100

VGS=±20V

VDS=160V, VGS=0, TJ=25°C

Drain-Source Leakage Current

IDSS

µA

VDS=160V, VGS=0, TJ=125°C

Static Drain-Source On-Resistance

RDS(ON)

360

VGS=10V, ID=2A

Total Gate Charge

10.2

Gate-Source Charge

Qgs

2.2

Gate-Drain (“Miller”) Charge

Qgd

3.8

VDS=160V

VGS=10V

ID=2A

Turn-on Delay Time

Td(on)

8.8

Rise Time

Turn-off Delay Time

Td(off)

21.2

Fall Time

20.4

VDD=100V

VGS=10V

ID=2A

RG=25

Input Capacitance

Ciss

373

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=25V

VGS=0

f=1MHz

Source-Drain Diode

Forward On Voltage

VSD

1.2

IS=2A, VGS=0, TJ=25°C

Continuous Source Current

2.05

VG=VD=0V, Force Current

Pulsed Source Current

ISM

5.5

VG=VD=0V, Force Current

Reverse Recovery Time

Trr

IF=2A, dI/dt=100A/us, TJ=25°C

Reverse Recovery Charge

Qrr

105

IF=2A, dI/dt=100A/us, TJ=25°C

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper pad.

The power dissipation is limited by 150°C junction temperature.

The data is tested by pulse: Pulse width

≦ 00µs, duty cycle 2%

≦

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