SSG4503J datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

SSG4503J

N-Ch: 6.9A, 30V, RDS(ON) 28 mΩ

Ω

P-Ch: -6.3A, -30V, RDS(ON) 36 mΩ

Ω

N & P-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

N-Ch ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Gate Threshold Voltage

VGS(th)

1.5

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=30V, VGS=0

VGS=10V, ID=6A

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=4A

Forward Transfer conductance

gfs

VDS=10V, ID=6A

Diode Forward Voltage

VSD

1.2

VGS=0, IS=1.7A

Dynamic

Total Gate Charge

13.5

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

4.7

VDS=24V

VGS=4.5V

ID=6A

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

18.5

Fall Time

VDS=20V

VGS=10V

RD=20

RG=3.3

ID=1A

Input Capacitance

Ciss

770

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=25V

VGS=0

f=1MHz

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