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SSD40P04J bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSD40P04J bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Elektronische Bauelemente SSD40P04J -40A, -40V, RDS(ON) 14 m P-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev.B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-252(D-Pack) CJU40P04 A C D N O P G E F H K J M B RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS Power switching applications Hard switched and high frequency circuits Uninterruptible power supply MARKING PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -40 A Pulsed Drain Current IDM -160 A Single Pulsed Avalanche Energy 1 EAS 544 mJ Power Dissipation PD 1.25 W Thermal Resistance from Junction to Ambient RθJA 100 °C / W Lead Temperature for Soldering Purposes@ 1/8’’ from case for 10s TL 260 °C Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Notes: 1. EAS condition: VDD=20V, L=1mH, RG=25 , Starting TJ=25°C 1 Gate 3 Source 2 Drain Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 Date Code |
Số phần tương tự - SSD40P04J |
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Mô tả tương tự - SSD40P04J |
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