MBRF3040CT – MBRF30200CT

30.0A SCHOTTKY BARRIER DIODE

Features

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

1 of 2

MBRF3040CT – MBRF30200CT

Case: ITO-220AB, Molded Plastic

Mounting Position: Any

Polarity: See Diagram

Terminals: Plated Leads Solderable per

Classification Rating 94V-O

Plastic Case Material has UL Flammability

Guard Ring Die Construction

For Use in Low Voltage Application

Low Power Loss, High Efficiency

Ideally Suited for Automatic Assembly

Mechanical Data

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MIL-STD-202, Method 208

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Lead Free: For RoHS / Lead Free Version

!

Schottky Barrier Chip

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= 15A

V

°C/W

pF

0.70

V

28

31

35

42

70

105

140

V

40

45

50

60

100

150

200

V

30100

MBRF

Characteristic

Symbol

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

30.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

200

A

Forward Voltage

FM

Peak Reverse Current

At Rated DC Blocking Voltage

0.1

20

mA

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

°C

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3040

MBRF

3045

MBRF

3050

MBRF

3060

30150

MBRF

30200

Units

0.80

0.85

0.92

350

280

200

3.0

2.0

CT

MBRF

MBRF

CT

CT

CT

CT

CT

CT

A

PIN1

2

3

D

F

E

PIN 1 -

+

J

PIN 3 -

PIN 2

K

ITO-220AB

Dim

Min

Max

A

14.50

15.50

B

9.50

10.50

C

2.55

2.90

D

E

13.00

14.00

F

0.30

0.90

G

3.00 Ø

3.80 Ø

H

6.30

7.30

I

4.20

4.80

J

2.50

2.90

K

0.47

0.75

L

2.50

3.10

P

2.35

2.75

All Dimensions in mm

C

B

G

P

I

L

H

3.30

4.30

-55 to +175

-55 to +150

Alldatasheet