MMBT2222AM datasheet(1/2 Pages) SECOS

tên linh kiện	MMBT2222AM

Giải thích chi tiết về linh kiện	0.5A, 75V NPN Plastic Encapsulated Transistor

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	SECOS [SeCoS Halbleitertechnologie GmbH]

Trang chủ	http://www.secosgmbh.com

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1 / 2 page

MMBT2222AM

0.5A, 75V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

19-May-2016 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

2

Emitter

Collector

3

1P

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Epitaxial planar die construction

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-723

8K

7 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

75

V

Collector to Emitter Voltage

VCEO

40

V

Emitter to Base Voltage

VEBO

6

V

Continuous Collector Current

IC

500

mA

Power Dissipation

PC

100

mW

Thermal Resistance from Junction to Ambient

R

θJA

1250

°C/ W

Junction, Storage Temperature

TJ, TSTG

150, -55 ~ 150

°C

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

75

-

V

IC=10

µA, IE=0

Collector to Emitter Breakdown Voltage

1

V(BR)CEO

40

-

V

IC=10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

6

-

V

IE=10

µA, IC=0

Collector Cut-Off Current

ICBO

-

0.01

µA VCB=60V, IE=0

Collector Cut-Off Current

ICEX

-

0.01

µA VCE=30V, VBE(off)= -3V

Emitter Cut-Off Current

IEBO

-

0.01

µA VEB=3V, IC=0

DC Current Gain

1

hFE

100

-

300

VCE=10V, IC=150mA

40

-

VCE=10V, IC=0.1mA

42

-

VCE=10V, IC=500mA

Collector to Emitter Saturation Voltage

1

VCE(sat)

-

1

V

IC=500mA, IB=50mA

-

0.3

IC=150mA, IB=15mA

Base to Emitter Saturation Voltage

1

VBE(sat)

-

2

V

IC=500mA, IB=50mA

-

1.2

IC=150mA, IB=15mA

Transition Frequency

fT

-

300

-

MHz

VCE=20V, IC=20mA, f=100MHz

Delay Time

td

-

10

-

ns

VCC=30V, VBE(off)= -0.5V,

IC=150mA, IB1=15mA

Rise Time

tr

-

25

-

VCC=30V, VBE(off)= -0.5V,

IC=150mA, IB1=15mA

Storage Time

ts

-

225

-

VCC=30V, IC=150mA,

IB1= -IB1=15mA

Fall Time

tf

-

60

-

VCC=30V, IC=150mA,

IB1= -IB1=15mA

Notes:

1.

Pulse Test: Pulse width

300

µs, duty cycle 2

≦

%.

SOT-723

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.150

1.250

F

0.170

0.270

B

0.750

0.850

G

0.270

0.370

C

-

0.500

H

0

0.050

D

1.150

1.250

I

-

0.150

E

0.800TYP.

Số phần tương tự - MMBT2222AM

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