MJD31C datasheet(1/1 Pages) SECOS

tên linh kiện	MJD31C

Giải thích chi tiết về linh kiện	3A , 100V NPN Plastic Encapsulated Transistor

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nhà sản xuất	SECOS [SeCoS Halbleitertechnologie GmbH]

Trang chủ	http://www.secosgmbh.com

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1 / 1 page

MJD31C

3A , 100V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

21-Sep-2012 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

3

Emitter

Collector

2

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Designed for general

Excellent DC Current Gain Characteristics

PACKAGE INFORMATION

Package

MPQ

Leader Size

TO-252

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

100

V

Emitter to Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

3

A

Collector Power Dissipation

PC

1.25

W

Junction and Storage Temperature Range

TJ ,TSTG

150 , -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

100

-

V

IC=1mA, IE=0

Collector-emitter breakdown voltage

VCEO(SUS)

100

-

V

IC=30mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

5

-

V

IE=1mA, IC=0

Collector cut-off current

ICES

-

20

µ

A

VCE=100V, VEB=0

Collector cut-off current

ICEO

-

50

µ

A

VCE=60V, IB=0

Emitter cut-off current

IEBO

-

1

mA

VEB=5V, IC=0

DC current gain

hFE

25

-

VCE=4V, IC=1A

10

-

50

VCE=4V, IC=3A

Collector-emitter saturation voltage

VCE(sat)

-

1.2

V

IC=3A, IB=375mA

Base-emitter voltage

VBE(ON)

-

1.8

V

VCE=4V, IC=3A

Transition frequency

fT

3

-

MHz

VCE=10V, IC=500mA, fT=1KHz

Note:

1.Pulse Test: PW ≦300µS, Duty Cycle≦2%.

A

C

D

N

O

P

G E

F

H

K

J

M

B

D-Pack (TO-252)

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

6.35

6.8

J

2.30 REF.

B

5.20

5.50

K

0.64

0.90

C

2.15

2.40

M

0.50

1.1

D

0.45

0.58

N

0.9

1.65

E

6.8

7.5

O

0

0.15

F

2.40

3.0

P

0.43

0.58

G

5.40

6.25

H

0.64

1.20

Số phần tương tự - MJD31C

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	MJD31C	150Kb / 6P	SILICON POWER TRANSISTORS 1998
STMicroelectronics	MJD31C	65Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS May-1999
Fairchild Semiconductor	MJD31C	49Kb / 5P	General Purpose Amplifier Low Speed Switching Applications
ON Semiconductor	MJD31C	81Kb / 8P	Complementary Power Transistors June, 2005 ??Rev. 6
STMicroelectronics	MJD31C	243Kb / 9P	Low voltage NPN power transistor 20-Apr-2007

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