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DTA114TSA bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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Giải thích chi tiết về linh kiện  PNP Digital Transistors (Built-in Resistors)
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DTA114TE / DTA114TUA / DTA114TCA /
DTA114TSA
PNP Digital Transistors (Built-in Resistors)
Elektronische Bauelemente
11-Aug-2010 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors.
The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS at (TA = 25°C unless otherwise noted)
Parameter
Symbol
LIMITS(DTA114T□)
Unit
E
UA
CA
SA
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
mA
Collector Current-Continuous
IC
-100
Collector Dissipation
PC
150
200
300
mW
Junction & Storage temperature
TJ, TSTG
150, -55~150
℃
ELECTRICAL CHARACTERISTICS at (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
-50
-
-
V
IC= -50A, IE= 0
Collector-emitter
breakdown voltage
V(BR)CEO
-50
-
-
IC= -1mA, IB= 0
Emitter-base breakdown voltage
V(BR)EBO
-5
-
-
V
IE= -50A, IC=0
Collector cut-off current
ICBO
-
-
-0.5
A
VCB= -50V, IE=0
Emitter cut-off current
IEBO
-
-
-0.5
A
VEB= -4V, IC=0
DC current gain
hFE
100
250
600
VCE= -5V, IC= -1mA
Collector-emitter
saturation voltage
VCE(sat)
-
-
-0.3
V
IC= -10mA, IB= -1mA
Transition frequency
fT
-
250
-
MHz
VCE= -10V, IC= -5mA,
f= 100MHz
Input resistor
R1
7
10
13
kΩ
DTA114TE (SOT-523)
Addreviated symbol:94
DTA114TUA (SOT-323)
Addreviated symbol:94
DTA114TSA (TO-92S)
DTA114TCA (SOT-23)
Addreviated symbol:94


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