BD136 datasheet(2/2 Pages) SECOS

tên linh kiện	BD136

Giải thích chi tiết về linh kiện	PNP General Purpose Transistor

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nhà sản xuất	SECOS [SeCoS Halbleitertechnologie GmbH]

Trang chủ	http://www.secosgmbh.com

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2 / 2 page

BD136 / BD138 / BD140

PNP General Purpose Transistor

Elektronische Bauelemente

29-Mar-2012 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector - Base Breakdown

Voltage

BD136

V(BR)CBO

-45

IC= -0.1mA, IE=0

BD138

-60

BD140

-80

Collector-emitter sustaining

voltage

BD136

VCEO(SUS)

-45

IC= -0.03A, IB=0

BD138

-60

BD140

-80

Emitter - Base Breakdown Voltage

V(BR)EBO

-5

IC=0, IE= -0.1mA

Collector Cut - Off Current

ICBO

-0.1

µA

VCB= -30V, IE= 0

Emitter Cut-Off Current

IEBO

-10

µA

VEB= -5V, IC= 0

DC Current Gain

hFE

250

VCE= -2V, IC= -150mA

VCE= -2V, IC= -5mA

VCE= -2V, IC= -500mA

Collector - Emitter Saturation Voltage

VCE(sat)

-0.5

IC= -500mA, IB = -50mA

Base – Emitter Voltage

VBE

-1

VCE= -2V, IC= -500mA

Note:

Pulse test: pulse width ≤350µs, duty cycle≤ 2.0%.

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