MPXM2102AS datasheet(245/670 Pages) MOTOROLA

245 / 670 page

MPX5010 MPXV5010G SERIES

3–99

Motorola Sensor Device Data

www.motorola.com/semiconductors

ON–CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING

The performance over temperature is achieved by integrat-

ing the shear–stress strain gauge, temperature compensa-

tion, calibration and signal conditioning circuitry onto a single

monolithic chip.

Figure 2 illustrates the Differential or Gauge configuration in

the basic chip carrier (Case 482). A fluorosilicone gel isolates

the die surface and wire bonds from the environment, while

allowing the pressure signal to be transmitted to the sensor

diaphragm.

The MPX5010 and MPXV5010G series pressure sensor

operating characteristics, and internal reliability and qualifi-

cation tests are based on use of dry air as the pressure me-

dia. Media, other than dry air, may have adverse effects on

sensor performance and long–term reliability. Contact the

factory for information regarding media compatibility in your

application.

Figure 3 shows the recommended decoupling circuit for in-

terfacing the integrated sensor to the A/D input of a micropro-

cessor or microcontroller. Proper decoupling of the power

supply is recommended.

Figure 4 shows the sensor output signal relative to pres-

sure input. Typical, minimum, and maximum output curves

are shown for operation over a temperature range of 0

° to

°C using the decoupling circuit shown in Figure 4. The

output will saturate outside of the specified pressure range.

Figure 2. Cross–Sectional Diagram SOP

(Not to Scale)

Figure 3. Recommended power supply decoupling

and output filtering.

For additional output filtering, please refer to

Application Note AN1646.

1.0

IPS

470 pF

OUTPUT

+5 V

0.01

GND

Vout

FLUOROSILICONE

GEL DIE COAT

WIRE BOND

DIFFERENTIAL SENSING

ELEMENT

THERMOPLASTIC

CASE

STAINLESS

STEEL CAP

LEAD

FRAME

DIE BOND

DIE

DIFFERENTIAL PRESSURE (kPa)

5.0

4.0

3.0

2.0

4.5

3.5

2.5

1.5

1.0

0.5

TRANSFER FUNCTION:

Vout = VS*(0.09*P+0.04) ± ERROR

VS = 5.0 Vdc

TEMP = 0 to 85

°C

TYPICAL

MAX

MIN

Figure 4. Output versus Pressure Differential

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

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