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Datasheet

SCS220AM

SiC Schottky Barrier Diode

*1 Tc=97°C DUTY CYCLE=50%,square *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10

s square,

Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%

*6 Tc=25°C

260*

3

A

56*

4

°C

°C

Tj

Tstg

175

55 to 175

Range of storage temperature

Absolute maximum ratings (Tj = 25°C)

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

Unit

Value

Repetitive peak forward current

Total power disspation

Junction temperature

650

650

20*

1

39*

5

40*

6

71*

2

A

A

Tube

-

Type

Packaging

Reel size (mm)

C

SCS220AM

Basic ordering unit (pcs)

Tape width (mm)

-

50

Marking

Packing code

Features

31nC

1) Shorter recovery time

A

W

Symbol

Construction

Silicon carbide epitaxial planer type

Parameter

V

V

A

3) High-speed switching possible

Outline

Inner circuit

Packaging specifications

TO-220FM

2) Reduced temperature dependence

650V

20A

(1)

(2)

(1) Cathode

(2) Anode

(1)

(2)

1/4

2017.06 - Rev.D