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Datasheet

SCS215AM

SiC Schottky Barrier Diode

3) High-speed switching possible

Outline

Inner circuit

Packaging specifications

TO-220FM

2) Reduced temperature dependence

650V

15A

Features

23nC

1) Shorter recovery time

A

W

Symbol

Construction

Silicon carbide epitaxial planer Schottky Diode

Parameter

V

V

A

A

A

Tube

-

Type

Packaging

Reel size (mm)

C

SCS215AM

Basic ordering unit (pcs)

Tape width (mm)

-

50

Marking

Packing code

Unit

Value

Repetitive peak forward current

Total power disspation

Junction temperature

650

650

15*

1

34*

5

39*

6

55*

2

Absolute maximum ratings (T

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

175

55 to 175

Range of storage temperature

200*

3

A

43*

4

°C

°C

(1)

(2)

(1) Cathode

(2) Anode

(1)

(2)

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2017.06 - Rev.D