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MBR20200F bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MBR20200F bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente MBR20200F Voltage 200 V 20.0 Amp Schottky Barrier Rectifiers 18-Apr-2017 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 1 1 1 2 2 2 2 3 3 3 3 Dimensions in millimeters A M J K L L G F B N D E C H RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES Metal silicon junction and majority carrier conduction Low power loss High efficiency High current capability For use in low voltage, high frequency inverters free wheeling , and polarlity protection applications. Lead free in comply with EU RoHS MECHANICAL DATA Case : ITO-220J molded plastic Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : As marked Mounting Position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ) Parameter Symbol Rating Unit Maximum Recurrent Peak Reverse Voltage VRRM 200 V Maximum RMS Voltage VRMS 140 V Maximum DC Blocking Voltage VDC 200 V Maximum Average Forward Rectified Current@ see fig. 1 IF 20 A Peak Forward Surge Current@ 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 150 A Maximum Instantaneous Forward Voltage@ 10A, per leg VF 0.92 V TJ=25°C 0.02 Maximum DC Reverse Current at Rated DC Blocking Voltage TJ=125°C IR 20 mA Typical Thermal Resistance from Junction to Case RθJC 4 °C /W Operating and Storage Temperature Range TJ, TSTG -55~150 °C ITO-220J Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 14.5 15.5 H 3.8 TYP. B 9.5 10.5 J 1.30 REF. C 13.20 REF. K 0.3 0.9 D 4.24 4.84 L 2.54 REF. E 2.52 3.20 M 2.70 REF. F 2.50 2.90 N φ 3.5 REF. G 0.47 0.75 |
Số phần tương tự - MBR20200F |
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Mô tả tương tự - MBR20200F |
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