MJD32C datasheet(2/6 Pages) FOSHAN

tên linh kiện	MJD32C

Giải thích chi tiết về linh kiện	Silicon PNP transistor in a TO-252 Plastic Package.

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Trang chủ	http://www.fsbrec.com/

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2 / 6 page

MJD32C

Rev.E May.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-100

Collector to Emitter Voltage

VCEO

-100

Emitter to Base Voltage

VEBO

-5.0

Collector Current - Continuous

-3.0

Collector Current – Continuous(Pulse)

ICP

-5.0

Base Current - Continuous

-1.0

Collector Power Dissipation

PC(TC=25 )

℃

Collector Power Dissipation

1.56

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-65～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage*

*VCEO

IC=-30mA

IB=0

-100

Collector Cut-Off Current

ICEO

VCE=-60V

IB=0

-50

μA

Collector Cut-Off Current

ICES

VCE=-100V

VBE=0

-20

μA

Emitter Cut-Off Current

IEBO

VBE=-5.0V

IC=0

-1.0

DC Current Gain*

*hFE

VCE=-4.0V

IC=-3.0A

Collector to Emitter Saturation

Voltage*

*VCE(sat)

IC=-3.0A

IB=-375mA

-1.2

Base to Emitter On Voltage*

*VBE(on)

VCE=-4.0A

IC=-3.0A

-1.8

Current- Gain Bandwidth Product

VCE=-10V

IC=-100mA

MHz

*:pw(

脉宽)≤300µs,duty cycle(占空比)≤2%.

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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