CSD18511KCS datasheet(1/10 Pages) TI1

tên linh kiện	CSD18511KCS

Giải thích chi tiết về linh kiện	40-V N-Channel NexFET Power MOSFET

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Qg - Gate Charge (nC)

0

10

20

30

40

50

60

70

0

1

2

3

4

5

6

7

8

9

10

D004

ID = 100 A

VDS = 20 V

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

0

1

2

3

4

5

6

7

8

9

10

D007

TC = 25°C, I D = 100 A

TC = 125°C, I D = 100 A

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD18511KCS

SLPS548 – JULY 2017

CSD18511KCS 40-V N-Channel NexFET™ Power MOSFET

1

1 Features

1

•

Low Qg and Qgd

•

Low RDS(ON)

•

Low-Thermal Resistance

•

Avalanche Rated

•

Lead-Free Terminal Plating

•

RoHS Compliant

•

Halogen Free

•

TO-220 Plastic Package

2 Applications

•

Secondary Side Synchronous Rectifier

•

Motor Control

3 Description

This

40-V,

2.1-mΩ,

TO-220

NexFET™

power

MOSFET is designed to minimize losses in power

conversion applications.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

Qg

Gate Charge Total (10 V)

63.9

nC

Qgd

Gate Charge Gate-to-Drain

9.7

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V

3.2

m

Ω

VGS = 10 V

2.1

VGS(th)

Threshold Voltage

1.8

V

Device Information(1)

DEVICE

MEDIA

QTY

PACKAGE

SHIP

CSD18511KCS

Tube

50

TO-220

Plastic Package

Tube

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package Limited)

110

A

Continuous Drain Current (Silicon Limited),

TC = 25°C

194

Continuous Drain Current (Silicon Limited),

TC = 100°C

137

IDM

Pulsed Drain Current(1)

400

A

PD

Power Dissipation

188

W

TJ,

Tstg

Operating Junction,

Storage Temperature

–55 to 175

°C

EAS

Avalanche Energy, Single Pulse

ID = 56 A, L = 0.1 mH, RG = 25 Ω

156

mJ

(1) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤

1%.

RDS(on) vs VGS

Gate Charge

Số phần tương tự - CSD18511KCS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	CSD18511KCS	321Kb / 2P	isc N-Channel MOSFET Transistor
Texas Instruments	CSD18511KCS	864Kb / 13P	CSD18511KCS 40V N-Channel NexFET™ Power MOSFET REVISED MARCH 2024
Texas Instruments	CSD18511KCS.B	864Kb / 13P	CSD18511KCS 40V N-Channel NexFET™ Power MOSFET REVISED MARCH 2024

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Mô tả tương tự - CSD18511KCS

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