2SC2715 datasheet(2/6 Pages) FOSHAN

tên linh kiện	2SC2715

Giải thích chi tiết về linh kiện	Silicon NPN transistor in a SOT-23 Plastic Package

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Trang chủ	http://www.fsbrec.com/

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2 / 6 page

2SC2715

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

4.0

Collector Current

Base Current

Collector Power Dissipation

150

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=35V

IE=0

0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=4.0V

IC=0

0.1

μA

DC Current Gain

hFE

VCE=12V

Ic=2.0mA

240

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=10mA

IB=1.0mA

0.4

Base to Emitter Saturation Voltage VBE(sat)

IC=10mA

IB=1.0mA

1.0

Transition Frequency

VCE=10V

IC=1.0mA

100

400

MHz

Reverse Transfer Capacitance

(Common Emitter)

Cob

VCE=10V

IE=0

f=1.0MHz

2.0

3.2

Conversion gain

Gpe

VCE=6.0V

IE=-1.0mA

f=10.7MHz

Collector to Base Time Constant

Cc.rbb’

VCE=10V

IE=-1.0mA

f=30MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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