NTHD4P02F datasheet(1/8 Pages) ONSEMI

tên linh kiện	NTHD4P02F

Giải thích chi tiết về linh kiện	Power MOSFET and Schottky Diode

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October, 2004 − Rev. 4

1

Publication Order Number:

NTHD4P02F/D

NTHD4P02F

Power MOSFET and

Schottky Diode

−20 V, −3.0 A, Single P−Channel with

3.0 A Schottky Barrier Diode, ChipFET

t

Features

• Leadless SMD Package Featuring a MOSFET and Schottky Diode

• 40% Smaller than TSOP−6 Package with Similar Thermal

Characteristics

• Independent Pinout to each Device to Ease Circuit Design

• Ultra Low VF Schottky

• Pb−Free Package is Available

Applications

• Li−Ion Battery Charging

• High Side DC−DC Conversion Circuits

• High Side Drive for Small Brushless DC Motors

• Power Management in Portable, Battery Powered Products

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Units

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current

Steady

TJ = 25°C

ID

−2.2

A

Current

Steady

State

TJ = 85°C

−1.6

t

v 5 s

TJ = 25°C

ID

−3.0

A

Pulsed Drain

Current

tp = 10 ms

IDM

−9.0

A

Power Dissipation

Steady

TJ = 25°C

PD

1.1

W

Steady

State

TJ = 85°C

0.6

t

v 5 s

TJ = 25°C

2.1

Continuous Source Current (Body Diode)

IS

−2.1

A

Operating Junction and Storage

Temperature

TJ, TSTG

−55 to 150

°C

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

SCHOTTKY DIODE MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

20

V

DC Blocking Voltage

VR

20

V

Average Rectified

Forward Current

Steady

State

TJ = 25°C

IF

2.2

A

t

v 5 s

TJ = 25 C

3.0

A

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

C2 = Specific Device Code

M = Month Code

Device

Package

Shipping†

ORDERING INFORMATION

NTHD4P02FT1

ChipFET

3000/Tape & Reel

ChipFET

CASE 1206A

STYLE 3

CONNECTIONS

MARKING

DIAGRAM

1

2

3

4

8

7

6

5

http://onsemi.com

G

D

P−Channel MOSFET

S

C

A

SCHOTTKY DIODE

8

7

6

5

4

3

2

1

C

D

A

S

G

NTHD4P02FT1G

ChipFET

(Pb−free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

−20 V

20 V

200 m

W @ −2.5 V

−130 m

W @ −4.5 V

0.510 V

RDS(on) TYP

−3.0 A

3.0 A

ID MAX

V(BR)DSS

MOSFET

SCHOTTKY DIODE

VR MAX

IF MAX

VF TYP

Số phần tương tự - NTHD4P02F

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