IRF820 datasheet(1/3 Pages) FCI

tên linh kiện	IRF820

Giải thích chi tiết về linh kiện	20A 600V N CHANNEL POWER MOSFET

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nhà sản xuất	FCI [First Components International]

Trang chủ	http://www.cotra.com.tw/

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GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS(on) Specified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

1

23

TO-252

Front View

1

23

TO-251

Front View

1

23

D

S

G

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain to Current

Continuous

Pulsed

ID

IDM

2.0

9.0

A

Gate-to-Source Voltage

Continue

Non-repetitive

VGS

VGSM

±20

±40

V

Total Power Dissipation

TO-251/TO-252

TO-220

TO-220FP

PD

60

32

W

Operating and Storage Temperature Range

TJ, TSTG

-55 to 150

Single Pulse Drain-to-Source Avalanche Energy

TJ = 25

(VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25 )

EAS

20

mJ

Thermal Resistance

Junction to Case

Junction to Ambient

JC

JA

1.0

62.5

/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

TL

260

IRF820 20A 600V N CHANNEL POWER MOSFET

Số phần tương tự - IRF820

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	IRF820	140Kb / 2P	N-CHANNEL Enhancement-Mode Silicon Gate TMOS
STMicroelectronics	IRF820	92Kb / 8P	N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET Aug-1998
Samsung semiconductor	IRF820	322Kb / 6P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF820	157Kb / 5P	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
Intersil Corporation	IRF820	54Kb / 7P	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET July 1999

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Mô tả tương tự - IRF820

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Unisonic Technologies	20N60	176Kb / 3P	20A, 600V N-CHANNEL POWER MOSFET
Alpha & Omega Semicondu...	AOK20N60	450Kb / 5P	600V,20A N-Channel MOSFET
Alpha & Omega Semicondu...	AOT20N60	545Kb / 6P	600V,20A N-Channel MOSFET
E-CMOS Corporation	EC7320NS60	599Kb / 6P	600V, 20A N-Channel MOSFET
Alpha & Omega Semicondu...	AOK20N60L	337Kb / 5P	600V,20A N-Channel MOSFET
Alpha & Omega Semicondu...	AOTF20C60P	462Kb / 6P	600V,20A N-Channel MOSFET
PFC Device Inc.	PSM20N60CT	955Kb / 10P	20A 600V Single N-Channel Power MOSFET
	PSM20N60CTB	993Kb / 10P	20A 600V Single N-Channel Power MOSFET
	PSM20N60PT	1Mb / 10P	20A 600V Single N-Channel Power MOSFET

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IRF820 bảng dữ liệu(PDF) 1 Page - First Components International

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Số phần tương tự - IRF820

Mô tả tương tự - IRF820

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