KTA1663 datasheet(2/6 Pages) FOSHAN

tên linh kiện	KTA1663

Giải thích chi tiết về linh kiện	Silicon PNP transistor in a SOT-89 Plastic Package

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Trang chủ	http://www.fsbrec.com/

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2 / 6 page

KTA1663

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-30

Collector to Emitter Voltage

VCEO

-30

Emitter to Base Voltage

VEBO

-5.0

Collector Current - Continuous

-1.5

Collector Base – Continuous

-0.3

Collector Power Dissipation

500

Collector Power Dissipation*

*PC

1.0

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

*BRKTA1663 mounted on ceramic substrate (250mm2×0.8t)

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=-10mA

IB=0

-30

Emitter to Base Breakdown Voltage

VEBO

IE=-1.0mA

IC=0

-5.0

Collector Cut-Off Current

ICBO

VCB=-30V

IE=0

-0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-0.1

μA

DC Current Gain

hFE

VCE=-2.0V

IC=-500mA

100

320

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-1.5A

IB=-0.03A

-2.0

Base to Emitter Voltage

VBE

VCE=-2.0V

IC=-500mA

-1.0

Transition Frequency

VCE=-2.0V

IC=-500mA

120

MHz

Collector Output Capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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