2SC2383T datasheet(2/6 Pages) FOSHAN

tên linh kiện	2SC2383T

Giải thích chi tiết về linh kiện	Silicon NPN transistor in a SOT-89 Plastic Package

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Trang chủ	http://www.fsbrec.com/

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2 / 6 page

2SC2383T

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

160

Collector to Emitter Voltage

VCEO

160

Emitter to Base Voltage

VEBO

6.0

Collector Current-Continuous

1.0

Collector Base-Continuous

0.5

Collector Power Dissipation

500

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

160

Collector Cut-Off Current

ICBO

VCB=150V

IE=0

1.0

μA

Emitter Base Cut-Off Current

IEBO

VEB=6.0V

IC=0

1.0

μA

DC Current Gain

hFE

VCE=5.0V

IC=200mA

320

Collector to Emitter Saturation

Voltage

VCE(sat) IC=500mA

IB=50mA

1.5

Emitter to Base Saturation Voltage

VBE

VCE=5.0V

IC=5.0mA

0.45

0.75

Transition Frequency

VCE=5.0V

IC=200mA

100

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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