FMT2308 datasheet(2/4 Pages) FCI

2 / 4 page

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250uA

Breakdown Voltage Temperature Coefficient

BVDSS /

0.05

V/ :

Reference to 25 : , ID=1mA

Gate Threshold Voltage

VGS(th)

1.0

3.0

VDS=VGS, ID=250uA

Forward Transconductance

gfs

5.0

VDS=5V, ID=3A

Gate-Source Leakage Current

IGSS

D100

VGS= D20V

Drain-Source Leakage Current(Tj=25 : )

VDS=60V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

VDS=48V, VGS=0

160

VGS=10V, ID=2.0A

Static Drain-Source On-Resistance

RDS(ON)

220

m Ł

VGS=4.5V, ID=1.7A

Total Gate Charge2

Gate-Source Charge

Qgs

1.6

Gate-Drain (“Miller”) Change

Qgd

ID=3A

VDS=48V

VGS=4.5V

Turn-on Delay Time2

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS=30V

ID=1A

VGS=10V

RG=3.3 Ł

RD=30 Ł

Input Capacitance

Ciss

490

780

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS=0V

VDS=25V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

1.2

IS=1.2A, VGS=0V

Reverse Recovery Time

Trr

Reverse Recovery Charge

Qrr

IS=3A, VGS=0V

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board;270 : /W when mounted on min. copper pad.

FMT2308 3Amps 60 Voltage N - Channel POWER MOSFET

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