BD652F datasheet(2/2 Pages) ISC

tên linh kiện	BD652F

Giải thích chi tiết về linh kiện	isc Silicon PNP Darlington Power Transistor

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isc Silicon PNP Darlington Power Transistor

BD652F

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-120

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -3A; IB= -12mA

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -5A; IB= -50mA

-2.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -5A; IB= -50mA

-3.0

VBE(on)

Base-Emitter On Voltage

IC= -3A ; VCE= -3V

-2.5

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-0.1

VCB= -70V; IE= 0; TC= 150℃

-1.0

ICEO

Collector Cutoff Current

VCE= -60V; IB= 0

-0.5

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -3V

2700

hFE-2

DC Current Gain

IC= -3A ; VCE= -3V

750

hFE-3

DC Current Gain

IC= -8A ; VCE= -3V

2000

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