IPS042G

2

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(1) Limited by junction temperature (pulsed current limited also by internal wiring)

(2) Operations at higher switching frequencies is possible. See Appl. notes.

31

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-

erenced to SOURCE lead. (TAmbient = 25

µm

copper thickness.

Symbol Parameter

Min.

Max.

Units

Test Conditions

Vds

Maximum drain to source voltage

—

47

Vin

Maximum input voltage

-0.3

7

Iin, max

Maximum IN current

-10

+10

mA

—

1.2

—3

Pd

Maximum power dissipation

(1)

—

1

W

ESD1

—

4

C=100pF, R=1500

Ω,

ESD2

—

0.5

C=200pF, R=0

Ω, L=10µH

T stor.

Max. storage temperature

-55

150

Tj max.

Max. junction temperature

-40

+150

V

A

kV

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rth1

Thermal resistance with standard footprint

(2 mosfets on)

—

100

—

Rth2

Thermal resistance with standard footprint

(1 mosfet on)

—

125

—

Rth3

Thermal resistance with 1" square footprint

(2 mosfets on)

—

65

—

Thermal Characteristics

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter

Min.

Max.

Units

Vds (max) Continuous Drain to Source voltage

—

35

VIH

High level input voltage

4

6

VIL

Low level input voltage

0

0.5

Ids

Continuous drain current (both mosfets at this current)

Tamb=85

o

C

—

0.53

A

Rin

Recommended resistor in series with IN pin

1

5

k

Ω

Tr-in(max) Max recommended rise time for IN signal (see fig. 2)

—

1

µS

Max. frequency in short circuit condition (Vcc = 14V)

0

1

kHz

V