TPCS8205 datasheet(1/7 Pages) TOSHIBA

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TPCS8205

2003-02-20

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

TPCS8205

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

l Small footprint due to small and thin package

l Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.)

l High forward transfer admittance: |Yfs| = 10 S (typ.)

l Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)

l Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

20

V

Drain-gate voltage (RGS = 20kΩ)

VDGR

20

V

Gate-source voltage

VGSS

±12

V

D C

(Note 1)

ID

5

Drain curren

Pulse

(Note 1)

IDP

20

A

Single-device

operation

(Note 3a)

PD (1)

1.1

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value

at dual operation

(Note 3b)

PD(2)

0.5

W

Single-device

operation

(Note 3a)

PD (1)

0.6

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value

at dual operation

(Note 3b)

PD (2)

0.35

W

Single pulse avalanche energy

(Note 4)

EAS

32.5

mJ

Avalanche current

IAR

5

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, Note 3b, Note 5)

EAR

0.05

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)

and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3R1E

Weight: 0.035 g (typ.)

Circuit Configuration

Số phần tương tự - TPCS8205

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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