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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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HAT3038R bảng dữ liệu(PDF) 2 Page - Renesas Technology Corp |
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HAT3038R bảng dữ liệu(HTML) 2 Page - Renesas Technology Corp |
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2 / 11 page  HAT3038R R07DS1375EJ0301 Rev.3.01 Page 2 of 9 Jan 20, 2017 Electrical Characteristics • N Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ± 0.1 A VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, I D = 1 mA Static drain to source on state resistance RDS(on) — 48 60 m ID = 2.5 A, VGS = 10 V Note3 RDS(on) — 55 80 m ID = 2.5 A, VGS = 4.5 V Note3 Forward transfer admittance |yfs| 6.6 11 — S ID = 2.5 A, VDS = 10 V Note3 Input capacitance Ciss — 675 — pF VDS = 10 V VGS = 0 f = 1 MHz Output capacitance Coss — 95 — pF Reverse transfer capacitance Crss — 35 — pF Total gate charge Qg — 5.2 — nC VDD = 25 V VGS = 4.5 V ID = 5 A Gate to source charge Qgs — 1.8 — nC Gate to drain charge Qgd — 2.1 — nC Turn-on delay time td(on) — 11 — ns VGS = 10 V, ID = 2.5 A VDD 30 V RL = 12 Rg = 4.7 Rise time tr — 8 — ns Turn-off delay time td(off) — 40 — ns Fall time tf — 4.5 — ns Body–drain diode forward voltage VDF — 0.82 1.07 V IF = 5 A, VGS = 0 Note3 Body–drain diode reverse recovery time trr — 40 — ns IF = 5 A, VGS = 0 diF/ dt = 100 A/ s Notes: 3. Pulse test • P Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 A VGS = -20,+10 V, VDS = 0 Zero gate voltage drain current IDSS — — –1 A VDS = –60 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, I D = –1 mA Static drain to source on state resistance RDS(on) — 70 88 m ID = –2 A, VGS = –10 V Note3 RDS(on) — 82 110 m ID = –2 A, VGS = – 4.5 V Note3 Forward transfer admittance |yfs| 4.5 7.5 — S ID = –2 A, VDS = –10 V Note3 Input capacitance Ciss — 1330 — pF VDS = –10 V VGS = 0 f = 1MHz Output capacitance Coss — 115 — pF Reverse transfer capacitance Crss — 75 — pF Total gate charge Qg — 10.5 — nC VDD = –25 V VGS = –4.5 V ID = -4 A Gate to source charge Qgs — 3.3 — nC Gate to drain charge Qgd — 4.5 — nC Turn-on delay time td(on) — 18 — ns VGS = –10 V, ID = –2 A VDD –30 V RL = 15 Rg = 4.7 Rise time tr — 12 — ns Turn-off delay time td(off) — 52 — ns Fall time tf — 5 — ns Body–drain diode forward voltage VDF — –0.83 –1.08 V IF = –4 A, VGS = 0 Note3 Body–drain diode reverse recovery time trr — 40 — ns IF = –4 A, VGS = 0 diF/ dt =100A/µs Notes: 3. Pulse test |
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