SW069R06VT datasheet(1/6 Pages) SEMIPOWER

tên linh kiện	SW069R06VT

Giải thích chi tiết về linh kiện	N-channel Enhanced mode TO-251/DFN5*6 MOSFET

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nhà sản xuất	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Trang chủ	http://www.samwinsemi.com

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1 / 6 page

Nov. 2016. Rev. 2.0

1/6

SW069R06VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

DFN5*6

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

C=25

oC)

60*

A

Continuous drain current (@T

C=100

oC)

38*

A

I

DM

Drain current pulsed

(note 1)

240

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

324

mJ

E

AR

Repetitive avalanche energy

(note 1)

18

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

208

1.6

W

Derating factor above 25oC

1.7

0.01

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

DFN5*6

R

thjc

Thermal resistance, Junction to case

0.6

oC/W

R

thja

Thermal resistance, Junction to ambient

77

oC/W

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 069R06VT

SW069R06VT

TO-251

TUBE

2

SW HA 069R06VT

SW069R06VT

DFN5*6

REEL

N-channel Enhanced mode TO-251/DFN5*6 MOSFET

Features

 High ruggedness

 Low R

DS(ON) (Typ 7.0mΩ)@VGS=4.5V

(Typ 6.0m

Ω)@V

GS=10V

 Low Gate Charge (Typ 83nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Electronic Ballast, Motor Control

Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

BV

DSS : 60V

I

D

: 60A

R

DS(ON) :7.0mΩ@VGS=4.5V

6.0m

Ω@V

GS=10V

1

2

3

TO-251

1

2

3

DFN5*6

Số phần tương tự - SW069R06VT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Xian Semipower Electron...	SW069R10VS	714Kb / 7P	N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET
Inchange Semiconductor ...	SW069R10VS	322Kb / 2P	isc N-Channel MOSFET Transistor

More results

Mô tả tương tự - SW069R06VT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Xian Semipower Electron...	SW15P02	1Mb / 7P	P-channel Enhanced mode TO-251/TO-252/DFN33/DFN56 MOSFET
	SW026R03VT	664Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW069R10VS	714Kb / 7P	N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET
	SW100R08VT	900Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW35N10V	894Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW40N06V	909Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW60N04V	625Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW60N06V2	847Kb / 6P	N-channel Enhanced mode TO-251 MOSFET
	SW80N06V1	930Kb / 6P	N-channel Enhanced mode TO-251/DFN5*6 MOSFET
	SW80N08V1	887Kb / 6P	N-channel Enhanced mode TO-251/DFN5*6 MOSFET

More results

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