EPC200 datasheet(2/6 Pages) EPC

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Absolute Maximum Ratings (Notes 1, 2)

Recommended Operating Conditions

Reverse Voltage VR

Storage Temperature Range (TS)

Lead Temperature solder, 4 sec. (TL)

Expected Lifetime (MTBF)

30.0 V

-40°C to +85°C

+260°C

500 * 106 h @ 25°C

(<2 FIT)

Reverse Voltage (VR)

Operating Temperature (TA)

Relative Humidity (non-condensing)

Min.

1.5

-40

Max.

20.0

+85

+95

Units

°C

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions

indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed

specifications and test conditions, see Electrical Characteristics.

Note 2: This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (2kV to <4kV). Handling and as -

sembly of this device should only be done at ESD protected workstations.

General Characteristics

Unless otherwise stated, measuring parameters are V R = 5.0 V, -40°C < TA < +85°C, RL = 50 Ω

Symbol

Parameter

Conditions/Comments

Values

Units

Min.

Typ.

Max.

λS max. Wavelength

max. Sensitivity

850

Wavelength Range

S = 20 % of Smax

450

1050

Sλ

Spectral Sensitivity

λ = 850nm, VR = 5V, Ie = 1 mW/cm2

λ = 950nm, VR = 5V, Ie = 1 mW/cm2

0.61

0.43

A/W

Quantum Efficiency

λ = 850nm, VR = 5V, Ie = 1 mW/cm2

λ = 950nm, VR = 5V, Ie = 1 mW/cm2

Half angle

±60

Open Circuit Voltage

Ie = 0.5 mW/cm2

250

TCV

Temperature Coefficient of ISC

0.25

%/K

TCO

Temperature Coefficient of VO

-3.0

mV/K

Photo Current

VR = 5V, Ie = 1 mW/cm2, λ = 850 nm

VR = 5V, Ie = 1 mW/cm2, λ = 950 nm

18.7

13.2

μA

Dark Current

VR = 5 V, TA= 20°C

VR = 20 V, TA= 20°C

Selected types with reduced dark current on request

ISC

Short-circuit Current

Ie = 1 mW/cm2, λ = 850 nm

μA

Rise/Fall Time

VR = +1.5 V

photo current measured at RL = 50

Ω , λ = 850 nm, IP = 200 μA

300

VR = +5.0 V

140

VR = +10.0 V

Capacitance

VR = +5V, ƒ = 100kHz, E = 0

NEP

Noise Equivalent Power

VR = 5 V

1.2x10-14

W/√Hz

Connection Diagram

TOP VIEW

Cathodes are

connected on chip

Assignment

Cathode

Anode

Figure 2: Chip connections

Characteristics subject to change without notice

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