MGSF3441VT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

V(BR)DSS

20

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)

IDSS

—

—

—

—

1.0

4.0

µAdc

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

—

—

±100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

0.45

—

—

Vdc

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 3.3 A)

(VGS = 2.5 Vdc, ID = 2.9 A)

rDS(on)

—

—

0.078

0.110

0.090

0.135

Ohms

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 V)

Ciss

—

90

—

pF

Output Capacitance

(VDS = 5.0 V)

Coss

—

50

—

Transfer Capacitance

(VDG = 5.0 V)

Crss

—

10

—

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

15 Vd

I

1 0 A

td(on)

—

27

50

ns

Rise Time

(VDD = 15 Vdc, ID = 1.0 A,

tr

—

17

30

Turn–Off Delay Time

( DD

, D

,

VGEN = 10 V, RL = 10 Ω)

td(off)

—

52

80

Fall Time

tf

—

45

70

Gate Charge

QT

—

3000

—

pC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

—

—

1.0

A

Pulsed Current

ISM

—

—

20

A

Forward Voltage(2)

VSD

—

0.80

1.2

V

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.