TP0202K datasheet(4/4 Pages) VISHAY

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TP0202K

Vishay Siliconix

www.vishay.com

Document Number: 71609

S-41777—Rev. D, 04-Oct-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10−3

10−2

600

10−1

10−4

100

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 350_C/W

3. TJM − TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

1.2

1.5

100

1000

0.00

0.3

0.6

0.9

TJ = 25_C

TJ = 150_C

Source-Drain Diode Forward Voltage

VSD − Source-to-Drain Voltage (V)

TJ = −55_C

VGS = 0 V

Threshold Voltage Variance Over Temperature

−0.3

−0.2

−0.1

−0.0

0.1

0.2

0.3

0.4

0.5

−50

−25

100

125

150

ID = 250 mA

TJ − Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

−50

−25

100

125

150

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

VGS = 10 V @ 200 mA

VGS = 4.5 V @ 50 mA

TJ − Junction Temperature (_C)

IGSS vs. Temperature

125

150

100

1000

100

VGS = 10 V

VGS = 5 V

For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and

Package Reliability represent a composite of all qualified locations.

For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?71609

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