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M48T254V bảng dữ liệu(PDF) 13 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  CLOCK FUNCTION IS TRANSPARENT TO RAM OPERATION.
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M48T254V
Data Retention Mode
Data can be read or written only when VCC is
greater than VPFD. When VCC is below VPFD (the
point at which write protection occurs), the clock
registers and the SRAM are blocked from any ac-
cess. When VCC falls below the Battery Switch
Over threshold (VSO), the device is switched from
VCC to battery backup (VBAT). RTC operation and
SRAM data are maintained via battery backup un-
til power is stable. All control, data, and address
signals must be powered down when VCC is pow-
ered down.
The lithium power source is designed to provide
power for RTC activity as well as RTC and RAM
data retention when VCC is absent or unstable.
The capability of this source is sufficient to power
the device continuously for the life of the equip-
ment into which it has been installed. For specifi-
cation purposes, life expectancy is ten (10) years
at 25°C with the internal oscillator running without
VCC. The actual life expectancy will be much long-
er if no battery energy is used (e.g., when VCC is
present).
Figure 11. Power Down/Up Mode AC Waveforms
Table 8. Power Down/Up Trip Points DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 3.0 to 3.6V (except where noted).
2. At 25°C, VCC = 0V; the expected tDR is defined as cumulative time in the absence of VCC with the clock oscillator running.
(Requires use of three M4T32-BR12SH SNAPHAT® tops.)
Symbol
Parameter(1)
Min
Max
Unit
tREC
VPFD (max) to CE low
40
120
ms
tF
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB
VPFD (min) to VSO VCC Fall Time
10
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
0
µs
tPD
CE High to Power-Fail
0
µs
tDR
(2)
Expected Data Retention Time
10
Years
tDR
tF
tREC
tR
tPD
tFB
VSO
VCC
CE
VPFD (max)
VPFD (min)
AI05657
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