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MSI2001MH bảng dữ liệu(PDF) 3 Page - MagnaChip Semiconductor.

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MSI2001MH bảng dữ liệu(HTML) 3 Page - MagnaChip Semiconductor.

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Preliminary – Subject to change without notice
Feb. 2012. Revision 1.6
MagnaChip Semiconductor Ltd
.
3
Absolute Maximum Ratings
(Note 1)
Symbol
Parameter
Min
Max
Unit
VDD
DC Supply Voltage on VDD pin
-0.5
4.6
V
VSEL
Control Input Voltage
-0.5
4.6
V
VIN/OUT
Input Voltage in D*, DA/B*
DA/B+, DA/B-
-0.5
VDD+0.3
V
D+,D- when VDD > 0
-0.5
VDD+0.3
V
D+,D- when VDD = 0
-0.5
5.25
V
IIN/OUT
In/Out Current in D*, DA/B*
50
mA
ESD
HBM (Note 2)
8000
V
MM (Note 3)
400
CDM (Note 4)
1500
TS
Storage Temperature
-65
+150
°C
Note 1: Stresses beyond the above listed maximum ratings may damage the device permanently. Operating above the recommended
conditions for extended time may stress the device and affect device reliability. Also the device may not operate normally above the
recommended operating conditions. These are stress ratings only.
Note 2: ESD tested per JESD22A-114E.
Note 3: ESD tested per JESD22A-115.
Note 4: ESD tested per JESD22C-101.
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Unit
VDD
Supply Voltage
3
4.3
V
VSEL
Control Input Voltage (Note 1)
0
VDD
V
VIN/OUT
Input Voltage in D*, DA/B*
0
VDD
V
TA
Operating Temperature
-40
+85
°C
Note1: Control pin input must be held “HIGH” or “LOW” and it must not float during operation.
DC Electrical Characteristics
All listed typical values are at 25°C unless otherwise specified. Boldface values indicate -40°C to +125°C of TJ.
Symbol
Parameter
Test Conditions
VDD(V)
Min
Typ
Max
Unit
VSEL_H
Control Input High Voltage
3 ≤ VDD ≤ 3.6V
3.0 ~ 3.6
1.3
V
VDD = 4.3V
4.3
1.7
V
VSEL_L
Control Input Low Voltage
3 ≤ VDD ≤ 3.6V
3.0 ~ 3.6
0.5
V
VDD = 4.3V
4.3
0.7
V
ISEL
Control Input Leakage Current
0 < VSEL ≤ VDD
4.3
-1
1
µA
ICC
Quiescent Supply Current
VSEL = 0 or VDD, IIN/OUT = 0A
4.3
1
µA
ICCT
Increase in ICC on VDD pin per
Control Voltage
VSEL = 2.6V
4.3
6
µA
ILEAK
OFF State Leakage Current on
D±, DA±, DB±
0 < VD±, DA±, DB± ≤ 3.6V
4.3
-2
2
µA
IOFF
Power OFF Leakage Current on
D± (See Figure 1)
VD+,D- = 4.3V
0
-2
2
µA
RON
On-Resistance
(See Figure 2)
VIN/OUT = 0.4V, IIN/OUT = 8mA
3.0
4
6.5
Ω
RON
On-Resistance Match Between
Channels (Note 1)
VIN/OUT = 0.4V, IIN/OUT = 8mA
3.0
0.35
Ω
RFLAT_ON
RON Flatness (Note 2)
0 < VIN/OUT ≤ 1.0V, IIN/OUT = 8mA
3.0
1
Ω
Note 1: •rRON(MAX) = | RON(Channel1)-RON(Channel2) |
Note 2: RFLAT_ON is defined as the difference between the maximum and minimum value of RON measured over specified VIN/OUT range.



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