AC TEST CONDITIONS

Input Pulse Levels

Input Rise and Fall Times

3ns

Input and Output Timing Reference Levels

1.5V

Output Load

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

AS6C8016

PARAMETER

SYM.

UNIT

Read Cycle Time

Address Access Time

Chip Enable Access Time

Output Enable Access Time

Chip Enable to Output in Low-Z

Output Enable to Output in Low-Z

Chip Disable to Output in High-Z

Output Disable to Output in High-Z

Output Hold from Address Change

LB#, UB# Access Time

LB#, UB# to High-Z Output

LB#, UB# to Low-Z Output

(2) WRITE CYCLE

AS6C8016

PARAMETER

UNIT

Write Cycle Time

Address Valid to End of Write

Chip Enable to End of Write

Address Set-up Time

Write Pulse Width

Write Recovery Time

Data to Write Time Overlap

Data Hold from End of Write Time

Output Active from End of Write

Write to Output in High-Z

LB#, UB# Valid to End of Write

*These parameters are guaranteed by device characterization, but not production tested.

512K X 8 BIT LOW POWER CMOS SRAM

January 2007

NOVEMBER 2007

NOVEMBER/2007, V 1.0

Alliance Memory Inc.

Page 4 of 12

AS6C8016

512K X 16 BIT SUPER LOW POWER CMOS SRAM

SYM.