MDF13N50TH datasheet(4/6 Pages) MGCHIP

4 / 6 page

Nov2009. Version 1.2

MagnaChip Semiconductor Ltd

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Case

Temperature

Fig.11 Transient Thermal Response Curve

Fig.12 Single Pulse Maximum Power

Dissipation

100

125

150

C, Case Temperature [

]

℃

1E-5

1E-4

1E-3

0.01

0.1

2000

4000

6000

8000

10000

12000

14000

single Pulse

thJC = 3.0

℃

C = 25

℃

Pulse Width (s)

-5

-4

-3

-2

-1

-2

-1

Notes :

※

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JC* Rθ JC

(t) + T

Θ JC=3.0

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Rectangular Pulse Duration [sec]

-1

-2

-1

10 µs

100 µs

100 ms

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

J=Max rated

C=25

℃

DS, Drain-Source Voltage [V]

10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40

400V

250V

100V

Note : I

※

D = 13.0A

G, Total Gate Charge [nC]

0.1

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

3000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

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