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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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MBQ60T65PESTH bảng dữ liệu(PDF) 2 Page - MagnaChip Semiconductor. |
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MBQ60T65PESTH bảng dữ liệu(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 8 page  Nov. 2015 Revision 0.0 MagnaChip Semiconductor Ltd. 2 Ordering Information Part Number Marking Temp. Range Package Packing RoHS Status MBQ60T65PESTH 60T65PES -55~175°C TO-247 Tube Halogen Free Electrical Characteristic (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Static Characteristic Collector-emitter breakdown voltage BVCES IC = 2mA, VGE = 0V 650 - - V Collector-emitter saturation voltage VCE(sat) IC = 60A, VGE =15V Tvj = 25°C - 1.85 2.4 V Tvj = 175°C - 2.6 - Diode forward voltage VF VGE = 0V, IF = 25A Tvj = 25°C - 1.45 2.0 V Tvj = 175°C - 1.35 - Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.5mA 4.0 5.0 6.0 V Zero gate voltage collector current ICES VCE = 650V, VGE = 0V, Tvj = 25°C - - 40 μA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±100 nA Dynamic Characteristic Total gate charge Qg VCE = 520V, IC = 60A, VGE = 15V - 95 - nC Gate-emitter charge Qge - 19 - Gate-collector charge Qgc - 47 - Input capacitance Cies VCE = 25V, VGE = 0V, f = 1MHz - 2327 - pF Reverse transfer capacitance Cres - 55 - Output capacitance Coes - 270 - Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH Switching Characteristic Turn-on delay time td(on) VGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Inductive Load, Tvj = 25°C - 42 - ns Rise time tr - 54 - Turn-off delay time td(off) - 142 - Fall time tf - 40 - Turn-on switching energy Eon - 0.92 - mJ Turn-off switching energy Eoff - 0.53 - Total switching energy Ets - 1.45 - Turn-on delay time td(on) VGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Inductive Load, Tvj = 175°C - 45 - ns Rise time tr - 58 - Turn-off delay time td(off) - 152 - Fall time tf - 35 - Turn-on switching energy Eon - 1.43 - mJ Turn-off switching energy Eoff - 0.53 - Total switching energy Ets - 1.96 - Reverse recovery time trr IF = 25A, diF/dt = 500A/ μs, Tvj = 25°C - 110 - ns Reverse recovery current Irr - 18 - A Reverse recovery charge Qrr - 1.10 - μC Reverse recovery time trr IF = 25A, diF/dt = 500A/ μs, Tvj = 175°C - 205 - ns Reverse recovery current Irr - 25 - A Reverse recovery charge Qrr - 2.67 - μC |
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