STM32L100R8 datasheet(53/103 Pages) STMICROELECTRONICS

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STM32L100C6 STM32L100R8/RB

Electrical characteristics

Table 20. Current consumption in Low power sleep mode

Symbol

Parameter

Conditions

Typ

Max

(1)

1. Guaranteed by characterization results, unless otherwise specified.

Unit

IDD (LP

Sleep)

Supply

current in

Low power

sleep

mode

All

peripherals

OFF, VDD

from 1.8 V

to 3.6 V

MSI clock, 65 kHz

fHCLK = 32 kHz

Flash OFF

TA = -40 °C to 25 °C 4.4

µA

MSI clock, 65 kHz

fHCLK = 32 kHz

Flash ON

TA = -40 °C to 25 °C 17.5

TA = 85 °C

MSI clock, 65 kHz

fHCLK = 65 kHz,

Flash ON

TA = -40 °C to 25 °C 18

TA = 85 °C

MSI clock, 131 kHz

fHCLK = 131 kHz,

Flash ON

TA = -40 °C to 25 °C 22

TA = 55 °C

TA = 85 °C

TIM9 and

USART1

enabled,

Flash ON,

VDD from

1.8 V to

3.6 V

MSI clock, 65 kHz

fHCLK = 32 kHz

TA = -40 °C to 25 °C 17.5

TA = 85 °C

MSI clock, 65 kHz

fHCLK = 65 kHz

TA = -40 °C to 25 °C 18

TA = 85 °C

MSI clock, 131 kHz

fHCLK = 131 kHz

TA = -40 °C to 25 °C 22

TA = 55 °C

TA = 85 °C

IDD Max

(LP Sleep)

Max

allowed

current in

Low power

Sleep

mode

VDD from

1.8 V to

3.6 V

200

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