STM32F302XD datasheet(87/168 Pages) STMICROELECTRONICS

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STM32F302xD STM32F302xE

Electrical characteristics

146

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 18. Typical application with a 32.768 kHz crystal

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden

to add one.

6.3.8

Internal clock source characteristics

The parameters given in Table 40 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 19.

High-speed internal (HSI) RC oscillator

Table 40. HSI oscillator characteristics(1)

1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

TRIM

HSI user trimming step

1(2)

2. Guaranteed by design, not tested in production.

DuCy(HSI)

Duty cycle

45(2)

-55(2)

ACCHSI

Accuracy of the HSI

oscillator

TA = -40 to 105°C

-2.8(3)

3. Data based on characterization results, not tested in production.

-3.8(3)

TA = -10 to 85°C

-1.9(3)

-2.3(3)

TA = 0 to 85°C

-1.9(3)

-2(3)

TA = 0 to 70°C

-1.3(3)

-2(3)

TA = 0 to 55°C

-1(3)

-2(3)

TA = 25°C(4)

4. Factory calibrated, parts not soldered.

-1

tSU(HSI)

HSI oscillator startup time

1(2)

-2(2)

μs

IDDA(HSI)

HSI oscillator power

consumption

100(2)

μA

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