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STM32F098VC bảng dữ liệu(PDF) 79 Page - STMicroelectronics

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STM32F098VC bảng dữ liệu(HTML) 79 Page - STMicroelectronics

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STM32F098CC STM32F098RC STM32F098VC
Electrical characteristics
99
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 22 for standard I/Os, and in Figure 23 for
5 V-tolerant I/Os. The following curves are design simulation results, not tested in
production.
RPU
Weak pull-up
equivalent resistor
(3)
VIN = VSS
25
40
55
kΩ
RPD
Weak pull-down
equivalent
resistor(3)
VIN = - VDDIOx
25
40
55
kΩ
CIO
I/O pin capacitance
-
-
5
-
pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 49:
I/O current injection susceptibility
.
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
Table 50. I/O static characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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