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STM32F038X6 bảng dữ liệu(PDF) 64 Page - STMicroelectronics

tên linh kiện STM32F038X6
Giải thích chi tiết về linh kiện  Clock management
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STM32F038X6 bảng dữ liệu(HTML) 64 Page - STMicroelectronics

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Electrical characteristics
STM32F038x6
64/102
DocID026079 Rev 5
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 19 for standard I/Os, and in Figure 20 for
5 V-tolerant I/Os. The following curves are design simulation results, not tested in
production.
RPU
Weak pull-up
equivalent resistor
(3)
VIN = VSS
25
40
55
kΩ
RPD
Weak pull-down
equivalent
resistor(3)
VIN = - VDDIOx
25
40
55
kΩ
CIO
I/O pin capacitance
-
-
5
-
pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 43:
I/O current injection susceptibility.
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
Table 44. I/O static characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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