STM8L101x2 datasheet(49/88 Pages) STMICROELECTRONICS

tên linh kiện	STM8L101x2

Giải thích chi tiết về linh kiện	Auto-wakeup unit

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STM8L101x1 STM8L101x2 STM8L101x3

Electrical parameters

Figure 20. Typical VIL and VIH vs. VDD (High sink I/Os)

Ilkg

Input leakage current (4)

VSS ≤VIN ≤VDD

Standard I/Os

50 (5)

VSS ≤VIN ≤VDD

True open drain I/Os

200(5)

VSS ≤VIN ≤VDD

PA0 with high sink LED

driver capability

200(5)

RPU

Weak pull-up equivalent resistor(6)

VIN = VSS

CIO(7)

I/O pin capacitance

1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.

2. Guaranteed by characterization results.

3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.

4. The max. value may be exceeded if negative current is injected on adjacent pins.

5. Not tested in production.

6. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics described in

Figure 22).

7. Guaranteed by design.

Table 26. I/O static characteristics (1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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