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ST1S41 bảng dữ liệu(PDF) 18 Page - STMicroelectronics |
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ST1S41 bảng dữ liệu(HTML) 18 Page - STMicroelectronics |
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18 / 27 page ![]() Application information ST1S41 18/27 DocID023654 Rev 2 6.4 Thermal dissipation The thermal design is important to prevent the thermal shutdown of the device if junction temperature goes above 150 °C. The three different sources of losses within the device are: a) conduction losses due to the on-resistance of the high-side switch (RHS) and low- side switch (RLS); these are equal to: Equation 23 where D is the duty cycle of the application. Note that the duty cycle is theoretically given by the ratio between VOUT and VIN, but actually it is slightly higher to compensate the losses of the regulator. b) switching losses due to high-side power MOSFET turn-on and off; these can be calculated as: Equation 24 where TRISE and TFALL are the overlap times of the voltage across the high-side power switch (VDS) and the current flowing into it during turn-on and turn-off phases, as shown in Figure 7. TSW is the equivalent switching time. For this device the typical value for the equivalent switching time is 20 ns. c) Quiescent current losses, calculated as: Equation 25 where IQ is the quiescent current (IQ=2.5 mA maximum). The junction temperature TJ can be calculated as: PANASONIC ECJ 10 to 22 6.3 < 5 EEFCD 10 to 68 6.3 15 to 55 SANYO TPA/B/C 100 to 470 4 to 16 40 to 80 TDK C3225 22 to 100 6.3 < 5 Table 8. Output capacitors (continued) Manufacturer Series Cap value ( μF) Rated voltage (V) ESR (m Ω) P COND R HS I OUT 2 DR LS I OUT 2 1D – () ⋅⋅ + ⋅⋅ = P SW V IN I OUT T RISE T FALL + () 2 ------------------------------------------- Fsw ⋅⋅ ⋅ V IN I OUT T SW F SW ⋅⋅ ⋅ == P Q V IN I Q ⋅ = |
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