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ST1S41 bảng dữ liệu(PDF) 18 Page - STMicroelectronics

tên linh kiện ST1S41
Giải thích chi tiết về linh kiện  850 kHz switching frequency
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ST1S41 bảng dữ liệu(HTML) 18 Page - STMicroelectronics

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Application information
ST1S41
18/27
DocID023654 Rev 2
6.4
Thermal dissipation
The thermal design is important to prevent the thermal shutdown of the device if junction
temperature goes above 150 °C. The three different sources of losses within the device are:
a)
conduction losses due to the on-resistance of the high-side switch (RHS) and low-
side switch (RLS); these are equal to:
Equation 23
where D is the duty cycle of the application. Note that the duty cycle is theoretically given by
the ratio between VOUT and VIN, but actually it is slightly higher to compensate the losses of
the regulator.
b)
switching losses due to high-side power MOSFET turn-on and off; these can be
calculated as:
Equation 24
where TRISE and TFALL are the overlap times of the voltage across the high-side power
switch (VDS) and the current flowing into it during turn-on and turn-off phases, as shown in
Figure 7. TSW is the equivalent switching time. For this device the typical value for the
equivalent switching time is 20 ns.
c)
Quiescent current losses, calculated as:
Equation 25
where IQ is the quiescent current (IQ=2.5 mA maximum).
The junction temperature TJ can be calculated as:
PANASONIC
ECJ
10 to 22
6.3
< 5
EEFCD
10 to 68
6.3
15 to 55
SANYO
TPA/B/C
100 to 470
4 to 16
40 to 80
TDK
C3225
22 to 100
6.3
< 5
Table 8. Output capacitors (continued)
Manufacturer
Series
Cap value (
μF)
Rated voltage (V)
ESR (m
Ω)
P
COND
R
HS
I
OUT
2
DR
LS
I
OUT
2
1D
()
⋅⋅
+
⋅⋅
=
P
SW
V
IN
I
OUT
T
RISE
T
FALL
+
()
2
-------------------------------------------
Fsw
⋅⋅
V
IN
I
OUT
T
SW
F
SW
⋅⋅
==
P
Q
V
IN
I
Q
=



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